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A nanoanalytical investigation of elemental distributions in high-k dielectric gate stacks on silicon

dc.contributor.authorDocherty, F.T.
dc.contributor.authorMacKenzie, M.
dc.contributor.authorCraven, A.J.
dc.contributor.authorMcComb, D.W.
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorMcFadzean, S.
dc.contributor.authorMcGilvery, C.M.
dc.date.accessioned2021-10-17T06:55:59Z
dc.date.available2021-10-17T06:55:59Z
dc.date.issued2008-01
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13670
dc.sourceIIOimport
dc.titleA nanoanalytical investigation of elemental distributions in high-k dielectric gate stacks on silicon
dc.typeJournal article
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage61
dc.source.endpage64
dc.source.journalMicroelectronic Engineering
dc.source.issue1
dc.source.volume85
imec.availabilityPublished - open access


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