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On the polarity dependence of oxide breakdown in MOS-devices with n+ and p+ polysilicon gate
Publication:
On the polarity dependence of oxide breakdown in MOS-devices with n+ and p+ polysilicon gate
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Date
1996
Proceedings Paper
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1353.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Ogier, Jean-Luc
;
Degraeve, Robin
;
Groeseneken, Guido
;
Maes, Herman
Journal
Abstract
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1892
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Acq. date: 2026-01-09
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Views
1892
since deposited on 2021-09-29
1
last month
1
last week
Acq. date: 2026-01-09
Citations