Skip to content
Institutional repository
Communities & Collections
Browse all items
Scientific publications
Open knowledge
Log In
imec Publications
Conference contributions
On the polarity dependence of oxide breakdown in MOS-devices with n+ and p+ polysilicon gate
Publication:
On the polarity dependence of oxide breakdown in MOS-devices with n+ and p+ polysilicon gate
Copy permalink
Date
1996
Proceedings Paper
Simple item page
Full metadata
Statistics
Loading...
Loading...
Files
1353.pdf
413.81 KB
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Ogier, Jean-Luc
;
Degraeve, Robin
;
Groeseneken, Guido
;
Maes, Herman
Journal
Abstract
Description
Statistics
Views
1895
since deposited on 2021-09-29
1
last month
Acq. date: 2026-02-25
Citations
Statistics
Views
1895
since deposited on 2021-09-29
1
last month
Acq. date: 2026-02-25
Citations