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Modeling bias temperature instability during stress and recovery

dc.contributor.authorGrasser, Tibor
dc.contributor.authorGoes, Wolfgang
dc.contributor.authorKaczer, Ben
dc.date.accessioned2021-10-17T07:24:20Z
dc.date.available2021-10-17T07:24:20Z
dc.date.issued2008-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13807
dc.sourceIIOimport
dc.titleModeling bias temperature instability during stress and recovery
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewyes
dc.source.beginpage65
dc.source.endpage68
dc.source.conferenceInternational Conference on Simulation of Semiconductor Processes and Devices - SISPAD
dc.source.conferencedate9/09/2008
dc.source.conferencelocationHakone Japan
imec.availabilityPublished - imec


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