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Electrostatic discharge effects in fully depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniques

dc.contributor.authorGriffoni, A.
dc.contributor.authorTazzoli, A.
dc.contributor.authorGerardin, S.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorMeneghesso, G.
dc.date.accessioned2021-10-17T07:25:12Z
dc.date.available2021-10-17T07:25:12Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13811
dc.sourceIIOimport
dc.titleElectrostatic discharge effects in fully depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniques
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage59
dc.source.endpage66
dc.source.conference30th Electrical Overstress/Electrostatic Discharge Symposium - EOS/ESD
dc.source.conferencedate7/09/2008
dc.source.conferencelocationTucson, AZ USA
imec.availabilityPublished - open access


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