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Microdose and breakdown effects induced by heavy ions on sub 20-nm triple gate SOI FETs

dc.contributor.authorGriffoni, Alessio
dc.contributor.authorGerardin, S.
dc.contributor.authorMeneghesso, G.
dc.contributor.authorPaccagnella, A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorPut, Sofie
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-17T07:25:27Z
dc.date.available2021-10-17T07:25:27Z
dc.date.issued2008
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13812
dc.sourceIIOimport
dc.titleMicrodose and breakdown effects induced by heavy ions on sub 20-nm triple gate SOI FETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage3182
dc.source.endpage3188
dc.source.journalIEEE Transactions on Nuclear Science
dc.source.issue6
dc.source.volume55
imec.availabilityPublished - open access
imec.internalnotesIEEE Nuclear and Space Radiation Effects Conference - NSREC 2008


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