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Degradation of Si1-xGex epitxial devices by proton irradiation

dc.contributor.authorOhyama, Hidenori
dc.contributor.authorHayama, Kiyoteru
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorPoortmans, Jef
dc.contributor.authorCaymax, Matty
dc.contributor.authorTakami, Y.
dc.contributor.authorSunaga, H.
dc.contributor.authorNashiyama, I.
dc.contributor.authorUwatoko, Y.
dc.date.accessioned2021-09-29T15:14:48Z
dc.date.available2021-09-29T15:14:48Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1381
dc.sourceIIOimport
dc.titleDegradation of Si1-xGex epitxial devices by proton irradiation
dc.typeJournal article
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage2429
dc.source.endpage31
dc.source.journalApplied Physics Letters
dc.source.issue16
dc.source.volume69
imec.availabilityPublished - open access


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