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dc.contributor.authorGuo, Wei
dc.contributor.authorCretu, B.
dc.contributor.authorRoutoure, J.-M.
dc.contributor.authorCarin, R.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorCollaert, Nadine
dc.contributor.authorPut, Sofie
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-17T07:28:41Z
dc.date.available2021-10-17T07:28:41Z
dc.date.issued2008
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13826
dc.sourceIIOimport
dc.titleImpact of strain and source/drain engineering on the low-frequency noise behaviour in n-channel Tri-Gate FinFETs
dc.typeJournal article
dc.contributor.imecauthorGuo, Wei
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage1889
dc.source.endpage1894
dc.source.journalSolid-State Electronics
dc.source.issue12
dc.source.volume52
imec.availabilityPublished - imec


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