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Radiation damage in proton-irradiated strained Si n-MOSFETs

dc.contributor.authorHayama, K.
dc.contributor.authorTakakura, K.
dc.contributor.authorOhtani, T.
dc.contributor.authorKudou, T.
dc.contributor.authorOhyama, H.
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-17T07:33:32Z
dc.date.available2021-10-17T07:33:32Z
dc.date.issued2008
dc.identifier.issn1369-8001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13845
dc.sourceIIOimport
dc.titleRadiation damage in proton-irradiated strained Si n-MOSFETs
dc.typeJournal article
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage314
dc.source.endpage318
dc.source.journalMaterials Science in Semiconductor Processing
dc.source.issue5_6
dc.source.volume11
imec.availabilityPublished - open access
imec.internalnotesE-MRS 2008 Spring Conference Symposium J: Beyond Silicon Technology: Materials and Devices for Post-Si CMOS


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