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Analytical model and Monte Carlo simulations for phosphorus implantation in germanium including ion channeling

dc.contributor.authorHellings, Geert
dc.contributor.authorEneman, Geert
dc.contributor.authorMeuris, Marc
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-17T07:35:11Z
dc.date.available2021-10-17T07:35:11Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13852
dc.sourceIIOimport
dc.titleAnalytical model and Monte Carlo simulations for phosphorus implantation in germanium including ion channeling
dc.typeProceedings paper
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewyes
dc.source.beginpage253
dc.source.endpage256
dc.source.conferenceInternational Conference on Simulation of Semiconductor Processes and Devices - SISPAD
dc.source.conferencedate9/09/2008
dc.source.conferencelocationHakone Japan
imec.availabilityPublished - imec


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