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Strain mapping in MOSFETs by transmission electron microscopy

dc.contributor.authorHüe, F.
dc.contributor.authorHytch, Martin
dc.contributor.authorLou, Nelson
dc.contributor.authorBender, Hugo
dc.contributor.authorClaverie, Alain
dc.date.accessioned2021-10-17T07:46:32Z
dc.date.available2021-10-17T07:46:32Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13899
dc.sourceIIOimport
dc.titleStrain mapping in MOSFETs by transmission electron microscopy
dc.typeProceedings paper
dc.contributor.imecauthorBender, Hugo
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage85
dc.source.endpage87
dc.source.conference9th International Conference on Ultimate Integration of Silicon - ULIS
dc.source.conferencedate12/03/2008
dc.source.conferencelocationUdine Italy
imec.availabilityPublished - open access


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