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Direct mapping of strain in a strained silicon transistor by high-resolution electron microscopy

dc.contributor.authorHüe, Florian
dc.contributor.authorHytch, Martin
dc.contributor.authorBender, Hugo
dc.contributor.authorHoudellier, Florent
dc.contributor.authorClaverie, Alain
dc.date.accessioned2021-10-17T07:47:01Z
dc.date.available2021-10-17T07:47:01Z
dc.date.issued2008
dc.identifier.issn0031-9007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13901
dc.sourceIIOimport
dc.titleDirect mapping of strain in a strained silicon transistor by high-resolution electron microscopy
dc.typeJournal article
dc.contributor.imecauthorBender, Hugo
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage156602
dc.source.journalPhysical Review Letters
dc.source.issue15
dc.source.volume100
imec.availabilityPublished - open access


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