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Gate-induced quantum- confinement transition of a single dopant atom in a silicon FinFET

dc.contributor.authorLansbergen, G.P.
dc.contributor.authorRahman, R.
dc.contributor.authorWellard, C.J.
dc.contributor.authorWoo, I.
dc.contributor.authorCaro, J.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorBiesemans, Serge
dc.contributor.authorKlimeck, G.
dc.contributor.authorHollenberg, L.C.L.
dc.contributor.authorRogge, S.
dc.date.accessioned2021-10-17T08:09:45Z
dc.date.available2021-10-17T08:09:45Z
dc.date.issued2008
dc.identifier.issn1745-2473
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13987
dc.sourceIIOimport
dc.titleGate-induced quantum- confinement transition of a single dopant atom in a silicon FinFET
dc.typeJournal article
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage656
dc.source.endpage661
dc.source.journalNature Physics
dc.source.issue8
dc.source.volume4
imec.availabilityPublished - open access


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