Gate-induced quantum- confinement transition of a single dopant atom in a silicon FinFET

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Authors

Lansbergen, G.P.; Rahman, R.; Wellard, C.J.; Woo, I.; Caro, J.; Collaert, Nadine; Biesemans, Serge; Klimeck, G.; Hollenberg, L.C.L.; Rogge, S.

ISSN

1745-2473

Issue

8

Journal

Nature Physics

Volume

4

Title

Gate-induced quantum- confinement transition of a single dopant atom in a silicon FinFET

Publication type

Journal article

Embargo date

9999-12-31

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