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Gate-induced quantum- confinement transition of a single dopant atom in a silicon FinFET
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Gate-induced quantum- confinement transition of a single dopant atom in a silicon FinFET
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Date
2008
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Lansbergen, G.P.
;
Rahman, R.
;
Wellard, C.J.
;
Woo, I.
;
Caro, J.
;
Collaert, Nadine
;
Biesemans, Serge
;
Klimeck, G.
;
Hollenberg, L.C.L.
;
Rogge, S.
Journal
Nature Physics
Abstract
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1917
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Metrics
Views
1917
since deposited on 2021-10-17
3
last month
1
last week
Acq. date: 2025-12-11
Citations