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Germanium as a fututre channel material for pMOSFETs: overview of the critical processing steps influencing I on and I off

dc.contributor.authorLeys, Frederik
dc.date.accessioned2021-10-17T08:17:34Z
dc.date.available2021-10-17T08:17:34Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14016
dc.sourceIIOimport
dc.titleGermanium as a fututre channel material for pMOSFETs: overview of the critical processing steps influencing I on and I off
dc.typeOral presentation
dc.source.peerreviewno
dc.source.conference4th International SiGe Technology and Device meeting
dc.source.conferencedate11/05/2008
dc.source.conferencelocationHsinchu Taiwan
imec.availabilityPublished - imec
imec.internalnotesTutorial


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