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Influence of metal capping layer on the work function of Mo gated metal-oxide semiconductor stacks

dc.contributor.authorLi, Zilan
dc.contributor.authorSchram, Tom
dc.contributor.authorStesmans, Andre
dc.contributor.authorFranquet, Alexis
dc.contributor.authorWitters, Thomas
dc.contributor.authorPantisano, Luigi
dc.contributor.authorYamada, Naoki
dc.contributor.authorTsunoda, Takaaki
dc.contributor.authorHooker, Jacob
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-17T08:22:38Z
dc.date.available2021-10-17T08:22:38Z
dc.date.issued2008
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14033
dc.sourceIIOimport
dc.titleInfluence of metal capping layer on the work function of Mo gated metal-oxide semiconductor stacks
dc.typeJournal article
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage83511
dc.source.journalApplied Physics Letters
dc.source.issue8
dc.source.volume93
imec.availabilityPublished - open access


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