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Influence of metal capping layer on the work function of Mo gated metal-oxide semiconductor stacks
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Influence of metal capping layer on the work function of Mo gated metal-oxide semiconductor stacks
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Date
2008
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Li, Zilan
;
Schram, Tom
;
Stesmans, Andre
;
Franquet, Alexis
;
Witters, Thomas
;
Pantisano, Luigi
;
Yamada, Naoki
;
Tsunoda, Takaaki
;
Hooker, Jacob
;
De Gendt, Stefan
;
De Meyer, Kristin
Journal
Applied Physics Letters
Abstract
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1920
since deposited on 2021-10-17
Acq. date: 2025-12-10
Citations
Metrics
Views
1920
since deposited on 2021-10-17
Acq. date: 2025-12-10
Citations