Publication:

Influence of metal capping layer on the work function of Mo gated metal-oxide semiconductor stacks

Date

2008
Journal article
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dc.contributor.authorLi, Zilan
dc.contributor.authorSchram, Tom
dc.contributor.authorStesmans, Andre
dc.contributor.authorFranquet, Alexis
dc.contributor.authorWitters, Thomas
dc.contributor.authorPantisano, Luigi
dc.contributor.authorYamada, Naoki
dc.contributor.authorTsunoda, Takaaki
dc.contributor.authorHooker, Jacob
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-17T08:22:38Z
dc.date.available2021-10-17T08:22:38Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14033
dc.source.beginpage83511
dc.source.issue8
dc.source.journalApplied Physics Letters
dc.source.volume93
dc.title

Influence of metal capping layer on the work function of Mo gated metal-oxide semiconductor stacks

dc.typeJournal article
dspace.entity.typePublication
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