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Inversion behavior on n and p type ALD - Al2O3/In0.53Ga0.47As MOS capacitors

dc.contributor.authorLin, Dennis
dc.contributor.authorWang, Wei-E
dc.contributor.authorBrammertz, Guy
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-17T08:25:10Z
dc.date.available2021-10-17T08:25:10Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14042
dc.sourceIIOimport
dc.titleInversion behavior on n and p type ALD - Al2O3/In0.53Ga0.47As MOS capacitors
dc.typeMeeting abstract
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewno
dc.source.conference39th IEEE Semiconductor Interface Specialists Conference
dc.source.conferencedate11/12/2008
dc.source.conferencelocationSan Diego, CA USA
dc.identifier.urlAbstract book IEEE SISC
imec.availabilityPublished - imec
imec.internalnoteshttp://www.ieeesisc.org/program.html


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