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dc.contributor.authorLoozen, Xavier
dc.contributor.authorJohn, Joachim
dc.contributor.authorChoulat, Patrick
dc.contributor.authorMa, Yue
dc.contributor.authorDekkers, Harold
dc.contributor.authorAgostinelli, Guido
dc.contributor.authorBeaucarne, Guy
dc.date.accessioned2021-10-17T08:31:18Z
dc.date.available2021-10-17T08:31:18Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14062
dc.sourceIIOimport
dc.titleEffectiveness of atomic and molecular hydrogen passivation of a silicon/silicon oxide interface with a deposited oxide
dc.typeProceedings paper
dc.contributor.imecauthorJohn, Joachim
dc.contributor.imecauthorChoulat, Patrick
dc.contributor.imecauthorDekkers, Harold
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.source.peerreviewno
dc.source.beginpage1200
dc.source.endpage1203
dc.source.conference23rd European Photovoltaic Solar Energy Conference
dc.source.conferencedate1/09/2008
dc.source.conferencelocationValencia Spain
imec.availabilityPublished - imec


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