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Effect of deposition parameters and post-deposition treatments on the surface passivation obtained on crystalline silicon with ALD Al2O3

dc.contributor.authorLoozen, Xavier
dc.contributor.authorVermang, Bart
dc.contributor.authorJohn, Joachim
dc.contributor.authorBeaucarne, Guy
dc.contributor.authorPoortmans, Jef
dc.date.accessioned2021-10-17T08:31:35Z
dc.date.available2021-10-17T08:31:35Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14063
dc.sourceIIOimport
dc.titleEffect of deposition parameters and post-deposition treatments on the surface passivation obtained on crystalline silicon with ALD Al2O3
dc.typeMeeting abstract
dc.contributor.imecauthorVermang, Bart
dc.contributor.imecauthorJohn, Joachim
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecVermang, Bart::0000-0003-2669-2087
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewno
dc.source.beginpageP-58
dc.source.conference8th International Conference on Atomic Layer Deposition - ALD 2008
dc.source.conferencedate29/06/2008
dc.source.conferencelocationBrugge Belgium
dc.identifier.urlno
imec.availabilityPublished - imec


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