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On the impact of defects close to the gate electrode on the low-frequency 1/f noise

dc.contributor.authorMagnone, Paolo
dc.contributor.authorPantisano, Luigi
dc.contributor.authorCrupi, Felice
dc.contributor.authorTrojman, Lionel
dc.contributor.authorPace, Calogero
dc.contributor.authorGiusi, Gino
dc.date.accessioned2021-10-17T08:42:13Z
dc.date.available2021-10-17T08:42:13Z
dc.date.issued2008-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14100
dc.sourceIIOimport
dc.titleOn the impact of defects close to the gate electrode on the low-frequency 1/f noise
dc.typeJournal article
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1056
dc.source.endpage1058
dc.source.journalIEEE Electron Devices Letters
dc.source.volume29
imec.availabilityPublished - open access


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