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Modifications of the three-dimensional transport properties of Si-doped Al0.25Ga0.75As exposed to CH 4/H2 reactive ion etching

dc.contributor.authorPereira, Ricardo
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorVan Rossum, Marc
dc.date.accessioned2021-09-29T15:16:53Z
dc.date.available2021-09-29T15:16:53Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1410
dc.sourceIIOimport
dc.titleModifications of the three-dimensional transport properties of Si-doped Al0.25Ga0.75As exposed to CH 4/H2 reactive ion etching
dc.typeJournal article
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage106
dc.source.endpage111
dc.source.journalJournal of Vacuum Science and Technology B
dc.source.issue1
dc.source.volume14
imec.availabilityPublished - open access


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