dc.contributor.author | Marcon, Denis | |
dc.contributor.author | Lorenz, Anne | |
dc.contributor.author | Derluyn, Joff | |
dc.contributor.author | Das, Jo | |
dc.contributor.author | Medjdoub, Farid | |
dc.contributor.author | Cheng, Kai | |
dc.contributor.author | Degroote, Stefan | |
dc.contributor.author | Leys, Maarten | |
dc.contributor.author | Mertens, Robert | |
dc.contributor.author | Germain, Marianne | |
dc.contributor.author | Borghs, Gustaaf | |
dc.date.accessioned | 2021-10-17T08:47:28Z | |
dc.date.available | 2021-10-17T08:47:28Z | |
dc.date.issued | 2008 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/14118 | |
dc.source | IIOimport | |
dc.title | GaN-on-Si HEMT stress under high electric field condition | |
dc.type | Meeting abstract | |
dc.contributor.imecauthor | Marcon, Denis | |
dc.contributor.imecauthor | Mertens, Robert | |
dc.contributor.imecauthor | Borghs, Gustaaf | |
dc.source.peerreview | no | |
dc.source.beginpage | 302 | |
dc.source.endpage | 302 | |
dc.source.conference | International Workshop on Nitride Semiconductors - IWN | |
dc.source.conferencedate | 6/10/2008 | |
dc.source.conferencelocation | Montreux Switzerland | |
imec.availability | Published - imec | |