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Impact of interface states on mobility and threshold voltage of Si-passivated Ge MOSFETs

dc.contributor.authorMartens, Koen
dc.contributor.authorMitard, Jerome
dc.contributor.authorLeys, Frederik
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeuris, Marc
dc.contributor.authorKaczer, Ben
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-10-17T08:51:59Z
dc.date.available2021-10-17T08:51:59Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14133
dc.sourceIIOimport
dc.titleImpact of interface states on mobility and threshold voltage of Si-passivated Ge MOSFETs
dc.typeMeeting abstract
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewyes
dc.source.conferenceIEEE Semiconductor Interface Specialists Conference - SISC
dc.source.conferencedate11/12/2008
dc.source.conferencelocationSan Diego, CA USA
imec.availabilityPublished - imec


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