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μ-Raman validated stress-enhanced mobility in XtreMOS transistors

dc.contributor.authorMoens, P.
dc.contributor.authorRoig, J.
dc.contributor.authorMeersman, J.
dc.contributor.authorBaele, J.
dc.contributor.authorDesoete, B.
dc.contributor.authorTack, M.
dc.contributor.authorDe Wolf, Ingrid
dc.date.accessioned2021-10-17T09:07:12Z
dc.date.available2021-10-17T09:07:12Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14181
dc.sourceIIOimport
dc.titleμ-Raman validated stress-enhanced mobility in XtreMOS transistors
dc.typeProceedings paper
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage84
dc.source.endpage87
dc.source.conference20th International Symposium on Power Semiconductor Devices and IC's - ISPSD
dc.source.conferencedate18/05/2008
dc.source.conferencelocationOrlando, FL USA
imec.availabilityPublished - imec


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