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Defect passivation by means of PECVD-nitride and hydrogenation for crystalline Si solar cells

dc.contributor.authorPoortmans, Jef
dc.contributor.authorSzlufcik, Jozef
dc.contributor.authorDuerinckx, Filip
dc.contributor.authorDe Clercq, Koen
dc.contributor.authorHorzel, Jörg
dc.contributor.authorVermeulen, Tom
dc.contributor.authorEvrard, Olivier
dc.contributor.authorNijs, Johan
dc.contributor.authorMertens, Robert
dc.date.accessioned2021-09-29T15:17:41Z
dc.date.available2021-09-29T15:17:41Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1419
dc.sourceIIOimport
dc.titleDefect passivation by means of PECVD-nitride and hydrogenation for crystalline Si solar cells
dc.typeOral presentation
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorSzlufcik, Jozef
dc.contributor.imecauthorDuerinckx, Filip
dc.contributor.imecauthorMertens, Robert
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.contributor.orcidimecDuerinckx, Filip::0000-0003-2570-7371
dc.source.peerreviewno
dc.source.conferenceProceedings of the 6th Workshop on the Role of Impurities and Defects in Si Device Processing;
dc.source.conferencelocation
imec.availabilityPublished - imec


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