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Conformal ultra shallow junctions by vapor phase doping with boron

dc.contributor.authorNguyen, Duy
dc.contributor.authorLeys, Frederik
dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorEyben, Pierre
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-17T09:17:32Z
dc.date.available2021-10-17T09:17:32Z
dc.date.issued2008-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14215
dc.sourceIIOimport
dc.titleConformal ultra shallow junctions by vapor phase doping with boron
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage229
dc.source.endpage230
dc.source.conference4th International SiGe Technology and Device Meeting - ISTDM
dc.source.conferencedate11/05/2008
dc.source.conferencelocationHsinchu Taiwan
imec.availabilityPublished - open access


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