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Low-temperature chemical vapor deposition of highly doped n-type epitaxial Si at high growth rate

dc.contributor.authorNguyen, Duy
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-17T09:17:50Z
dc.date.available2021-10-17T09:17:50Z
dc.date.issued2008
dc.identifier.issn0169-4332
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14216
dc.sourceIIOimport
dc.titleLow-temperature chemical vapor deposition of highly doped n-type epitaxial Si at high growth rate
dc.typeJournal article
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage6072
dc.source.endpage6075
dc.source.journalApplied Surface Science
dc.source.issue19
dc.source.volume254
dc.identifier.urlDOI : 10.1016/j.apsusc.2008.02.194
imec.availabilityPublished - imec


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