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HfO2 atomic layer deposition using HfCl4/H2O: the first reaction cycle

dc.contributor.authorNyns, Laura
dc.contributor.authorDelabie, Annelies
dc.contributor.authorCaymax, Matty
dc.contributor.authorHeyns, Marc
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorVinckier, Chris
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-17T09:22:28Z
dc.date.available2021-10-17T09:22:28Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14230
dc.sourceIIOimport
dc.titleHfO2 atomic layer deposition using HfCl4/H2O: the first reaction cycle
dc.typeProceedings paper
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage257
dc.source.endpage267
dc.source.conferenceAtomic Layer Deposition Applications 4
dc.source.conferencedate12/10/2008
dc.source.conferencelocationHonolulu, HI USA
dc.identifier.urlhttp://ecsdl.aip.org/ECST
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 16, Issue 4


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