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Silicon orientation effects in the atomic layer deposition of hafnium oxide

dc.contributor.authorNyns, Laura
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorHall, L.
dc.contributor.authorDelabie, Annelies
dc.contributor.authorHeyns, Marc
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorVinckier, Chris
dc.contributor.authorZimmerman, Paul
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-17T09:23:28Z
dc.date.available2021-10-17T09:23:28Z
dc.date.issued2008
dc.identifier.issn0013-4651
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14233
dc.sourceIIOimport
dc.titleSilicon orientation effects in the atomic layer deposition of hafnium oxide
dc.typeJournal article
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewyes
dc.source.beginpageG9
dc.source.endpageG12
dc.source.journalJournal of the Electrochemical Society
dc.source.issue2
dc.source.volume155
imec.availabilityPublished - imec


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