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Temperature dependent capacitance-voltage and conductance-voltage characterisation of the HfO2

dc.contributor.authorO'Connor, E.
dc.contributor.authorLong, R.D.
dc.contributor.authorMonaghan, S.
dc.contributor.authorBrammertz, Guy
dc.contributor.authorCherkaoui, K.
dc.contributor.authorO'Mahony, A.
dc.contributor.authorPovey, I.M.
dc.contributor.authorPemble, M.E.
dc.contributor.authorHeyns, Marc
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorHurley, Paul
dc.date.accessioned2021-10-17T09:23:48Z
dc.date.available2021-10-17T09:23:48Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14234
dc.sourceIIOimport
dc.titleTemperature dependent capacitance-voltage and conductance-voltage characterisation of the HfO2
dc.typeMeeting abstract
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.source.peerreviewno
dc.source.conferenceSemiconductor Interface Specialists Conference
dc.source.conferencedate11/12/2008
dc.source.conferencelocationSan Diego, CA USA
dc.identifier.urlhttp://www.ieeesisc.org/program.html
imec.availabilityPublished - imec


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