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Electron energy dependence of defect generation in high-k gate stacks

dc.contributor.authorO'Connor, Robert
dc.contributor.authorPantisano, Luigi
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorKaczer, Ben
dc.contributor.authorRoussel, Philippe
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-17T09:24:52Z
dc.date.available2021-10-17T09:24:52Z
dc.date.issued2008
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14237
dc.sourceIIOimport
dc.titleElectron energy dependence of defect generation in high-k gate stacks
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage64503
dc.source.journalJournal of Applied Physics
dc.source.issue6
dc.source.volume103
dc.identifier.urlhttp://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000103000006064503000001&idtype=cvips&prog=search
imec.availabilityPublished - open access


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