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Effects of electron and proton radiation on embedded SiGe source/drain diodes

dc.contributor.authorOhyama, H.
dc.contributor.authorNagano, T.
dc.contributor.authorTakakura, K.
dc.contributor.authorMotoki, M.
dc.contributor.authorMatsuo, M.
dc.contributor.authorNakamura, H.
dc.contributor.authorSawada, M.
dc.contributor.authorMidorikawa, M.
dc.contributor.authorKuboyama, S.
dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-17T09:26:13Z
dc.date.available2021-10-17T09:26:13Z
dc.date.issued2008
dc.identifier.issn1369-8001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14241
dc.sourceIIOimport
dc.titleEffects of electron and proton radiation on embedded SiGe source/drain diodes
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage310
dc.source.endpage313
dc.source.journalMaterials Science in Semiconductor Processing
dc.source.issue5_6
dc.source.volume11
imec.availabilityPublished - imec
imec.internalnotesE-MRS 2008 Spring Conference Symposium J: Beyond Silicon Technology: Materials and Devices for Post-Si CMOS


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