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Degradation of SiC-MESFETs by irradiation

dc.contributor.authorOhyama, H.
dc.contributor.authorTakakura, K.
dc.contributor.authorUemura, K.
dc.contributor.authorShigaki, K.
dc.contributor.authorKudou, T.
dc.contributor.authorMatsumoto, T.
dc.contributor.authorArai, M.
dc.contributor.authorKuboyama, S.
dc.contributor.authorKamezawa, C.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-17T09:27:37Z
dc.date.available2021-10-17T09:27:37Z
dc.date.issued2008
dc.identifier.issn0957-4522
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14245
dc.sourceIIOimport
dc.titleDegradation of SiC-MESFETs by irradiation
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage175
dc.source.endpage178
dc.source.journalJournal of Materials Science: Materials in Electronics
dc.source.issue2
dc.source.volume19
imec.availabilityPublished - open access


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