Show simple item record

Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs

dc.contributor.authorPavanello, Marcelo Antonio
dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorSimoen, Eddy
dc.contributor.authorRooyackers, Rita
dc.contributor.authorCollaert, Nadine
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-17T09:42:50Z
dc.date.available2021-10-17T09:42:50Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14291
dc.sourceIIOimport
dc.titleInfluence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage253
dc.source.endpage261
dc.source.conferenceMicroelectronics Technology and Devices - SBMicro
dc.source.conferencedate1/09/2008
dc.source.conferencelocationGramado Brazil
imec.availabilityPublished - open access
imec.internalnotesECS Transactions. Vol. 14, Issue 1


Files in this item

Thumbnail
Name:
16474.pdf
Size:
216.1Kb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record