Direct comparison of Si/high-k and Si/SiO2 channels in advanced FD SOI MOSFETs
dc.contributor.author | Pham-Nguyen, L. | |
dc.contributor.author | Fenouillet-Beranger, C. | |
dc.contributor.author | Vandooren, Anne | |
dc.contributor.author | Wild, A. | |
dc.contributor.author | Ghibaudo, G. | |
dc.contributor.author | Cristoloveanu, S. | |
dc.date.accessioned | 2021-10-17T09:50:28Z | |
dc.date.available | 2021-10-17T09:50:28Z | |
dc.date.issued | 2008 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/14313 | |
dc.source | IIOimport | |
dc.title | Direct comparison of Si/high-k and Si/SiO2 channels in advanced FD SOI MOSFETs | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Vandooren, Anne | |
dc.contributor.orcidimec | Vandooren, Anne::0000-0002-2412-0176 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | no | |
dc.source.beginpage | 25 | |
dc.source.endpage | 26 | |
dc.source.conference | IEEE International SOI Conference Proceedings | |
dc.source.conferencedate | 6/10/2008 | |
dc.source.conferencelocation | New Paltz, NY USA | |
imec.availability | Published - open access |