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Design of UWB LNA in 45nm CMOS technology: Planar vs. FinFET

dc.contributor.authorPonton, Davide
dc.contributor.authorPalestri, P
dc.contributor.authorEsseni, D.
dc.contributor.authorSelmi, L.
dc.contributor.authorTiebout, M.
dc.contributor.authorParvais, Bertrand
dc.contributor.authorKnoblinger, G.
dc.date.accessioned2021-10-17T09:56:19Z
dc.date.available2021-10-17T09:56:19Z
dc.date.issued2008-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14331
dc.sourceIIOimport
dc.titleDesign of UWB LNA in 45nm CMOS technology: Planar vs. FinFET
dc.typeProceedings paper
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.source.peerreviewyes
dc.source.beginpage2701
dc.source.endpage2704
dc.source.conferenceIEEE International Symposium on Circuits and Systems
dc.source.conferencedate18/05/2008
dc.source.conferencelocationSeattle, WA USA
imec.availabilityPublished - imec


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