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Degradation of high resistivity silicon float zone and magnetic Czochralski n-type silicon detectors subjected to 2-MeV electron irradiation

dc.contributor.authorRafi, J.M.
dc.contributor.authorBoulord, C.
dc.contributor.authorHayama, K.
dc.contributor.authorOhyama, H.
dc.contributor.authorCampabadal, F.
dc.contributor.authorPellegrini, G.
dc.contributor.authorLozano, M.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-17T10:03:03Z
dc.date.available2021-10-17T10:03:03Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14351
dc.sourceIIOimport
dc.titleDegradation of high resistivity silicon float zone and magnetic Czochralski n-type silicon detectors subjected to 2-MeV electron irradiation
dc.typeOral presentation
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.conference8th International Conference on Position Sensitive Detectors
dc.source.conferencedate1/09/2008
dc.source.conferencelocationGlasgow UK
imec.availabilityPublished - imec


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