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High-frequency noise performance of 60-nm gate-length FinFETs

dc.contributor.authorRaskin, Jean-Pierre
dc.contributor.authorPailloncy, Guillaume
dc.contributor.authorLederer, Dimitri
dc.contributor.authorDanneville, Francois
dc.contributor.authorDambrine, Gilles
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorParvais, Bertrand
dc.date.accessioned2021-10-17T10:06:16Z
dc.date.available2021-10-17T10:06:16Z
dc.date.issued2008
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14361
dc.sourceIIOimport
dc.titleHigh-frequency noise performance of 60-nm gate-length FinFETs
dc.typeJournal article
dc.contributor.imecauthorLederer, Dimitri
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage2718
dc.source.endpage2727
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue10
dc.source.volume55
imec.availabilityPublished - open access


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