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First-principles simulations of the oxidation of the GaAs(001)-beta2(2x4) surface

dc.contributor.authorScarrozza, Marco
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorHoussa, Michel
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-17T10:29:17Z
dc.date.available2021-10-17T10:29:17Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14427
dc.sourceIIOimport
dc.titleFirst-principles simulations of the oxidation of the GaAs(001)-beta2(2x4) surface
dc.typeOral presentation
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewno
dc.source.conference39th IEEE Semiconductor Interface Specialists Conference
dc.source.conferencedate11/12/2008
dc.source.conferencelocationSan Diego, CA USA
dc.contributor.thesisadvisorStesmans, Andre
imec.availabilityPublished - imec


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