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Shallow boron implantations in Ge and the role of the pre-amorphization depth

dc.contributor.authorSimoen, Eddy
dc.contributor.authorBrouwers, Gijs
dc.contributor.authorSatta, Alessandra
dc.contributor.authorDavid, M.L.
dc.contributor.authorPailloux, F.
dc.contributor.authorParmentier, Brigitte
dc.contributor.authorClarysse, Trudo
dc.contributor.authorGoossens, Jozefien
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorMeuris, Marc
dc.date.accessioned2021-10-17T10:44:38Z
dc.date.available2021-10-17T10:44:38Z
dc.date.issued2008
dc.identifier.issn1369-8001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14469
dc.sourceIIOimport
dc.titleShallow boron implantations in Ge and the role of the pre-amorphization depth
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorParmentier, Brigitte
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage368
dc.source.endpage371
dc.source.journalMaterials Science in Semiconductor Processing
dc.source.issue5_6
dc.source.volume11
imec.availabilityPublished - open access
imec.internalnotesE-MRS 2008 Spring Conference Symposium J: Beyond Silicon Technology: Materials and Devices for Post-Si CMOS


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