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Electrical activity of dislocations and defects in strained Si and Ge based devices

dc.contributor.authorSimoen, Eddy
dc.contributor.authorEneman, Geert
dc.contributor.authorVerheyen, Peter
dc.contributor.authorLoo, Roger
dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-17T10:45:51Z
dc.date.available2021-10-17T10:45:51Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14472
dc.sourceIIOimport
dc.titleElectrical activity of dislocations and defects in strained Si and Ge based devices
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage513
dc.source.endpage527
dc.source.conferenceSiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices
dc.source.conferencedate13/10/2008
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 16, Issue 10


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