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Radiation damage studies of strain-engineered and high-mobility deep submicrometer MOSFETs

dc.contributor.authorSimoen, Eddy
dc.contributor.authorPut, Sofie
dc.contributor.authorVan Uffelen, Nick
dc.contributor.authorLeroux, P.
dc.contributor.authorClaeys, Cor
dc.contributor.authorOhyama, H.
dc.contributor.authorKulkarni, R.
dc.contributor.authorSchrimpf, R.D.
dc.contributor.authorGalloway, K.F.
dc.date.accessioned2021-10-17T10:48:05Z
dc.date.available2021-10-17T10:48:05Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14478
dc.sourceIIOimport
dc.titleRadiation damage studies of strain-engineered and high-mobility deep submicrometer MOSFETs
dc.typeOral presentation
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.conference8th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications
dc.source.conferencedate15/12/2008
dc.source.conferencelocationTsukuba Japan
imec.availabilityPublished - imec


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