Show simple item record

Source/drain junction integration issues in submicron Ge MOSFETs

dc.contributor.authorSimoen, Eddy
dc.contributor.authorSatta, Alessandra
dc.contributor.authorEneman, Geert
dc.contributor.authorBrunco, David
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorOpsomer, Karl
dc.contributor.authorMeuris, Marc
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-17T10:48:28Z
dc.date.available2021-10-17T10:48:28Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14479
dc.sourceIIOimport
dc.titleSource/drain junction integration issues in submicron Ge MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorOpsomer, Karl
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage211
dc.source.endpage214
dc.source.conference9th International Conference on Solid-State and Integrated-Circuit Technology - IC-SICT
dc.source.conferencedate20/10/2008
dc.source.conferencelocationBeijing China
imec.availabilityPublished - open access


Files in this item

Thumbnail
Name:
16615.pdf
Size:
199.4Kb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record