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Etch rate study of germanium, GaAs, and InGaAs: a challenge in semiconductor processing.

dc.contributor.authorSioncke, Sonja
dc.contributor.authorBrunco, David
dc.contributor.authorMeuris, Marc
dc.contributor.authorVan Steenbergen, Jan
dc.contributor.authorVrancken, Evi
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-17T10:50:21Z
dc.date.available2021-10-17T10:50:21Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14484
dc.sourceIIOimport
dc.titleEtch rate study of germanium, GaAs, and InGaAs: a challenge in semiconductor processing.
dc.typeMeeting abstract
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorVan Steenbergen, Jan
dc.contributor.imecauthorVrancken, Evi
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conference9th International Symposium on Ultra Clean Processing of Semiconductor Surfaces - UCPSS
dc.source.conferencedate22/09/2008
dc.source.conferencelocationBrugge Belgium
imec.availabilityPublished - open access


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