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Paramagnetic point defects at interfacial layer in biaxial tensile strained (100)Si/SiO2

dc.contributor.authorSomers, P.
dc.contributor.authorStesmans, Andre
dc.contributor.authorAfanas'ev, V.V.
dc.contributor.authorClaeys, Cor
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-17T10:54:54Z
dc.date.available2021-10-17T10:54:54Z
dc.date.issued2008
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14497
dc.sourceIIOimport
dc.titleParamagnetic point defects at interfacial layer in biaxial tensile strained (100)Si/SiO2
dc.typeJournal article
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage33703
dc.source.journalJournal of Applied Physics
dc.source.issue3
dc.source.volume103
imec.availabilityPublished - imec


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