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Systematic TLM measurements of NiSi and PtSi specific contact resistance to n- and p- type Si in a broad doping range

dc.contributor.authorStavitski, Natalie
dc.contributor.authorVan Dal, Mark J. H.
dc.contributor.authorLauwers, Anne
dc.contributor.authorVrancken, Christa
dc.contributor.authorKovalgin, Alexey Y.
dc.contributor.authorWolters, Rob A.M.
dc.date.accessioned2021-10-17T11:00:22Z
dc.date.available2021-10-17T11:00:22Z
dc.date.issued2008
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14512
dc.sourceIIOimport
dc.titleSystematic TLM measurements of NiSi and PtSi specific contact resistance to n- and p- type Si in a broad doping range
dc.typeJournal article
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorVrancken, Christa
dc.source.peerreviewyes
dc.source.beginpage378
dc.source.endpage381
dc.source.journalIEEE Electron Device Letters
dc.source.issue4
dc.source.volume29
imec.availabilityPublished - imec


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