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Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge Layers on Si substrates

dc.contributor.authorTerzieva, Valentina
dc.contributor.authorSouriau, Laurent
dc.contributor.authorCaymax, Matty
dc.contributor.authorBrunco, David
dc.contributor.authorMoussa, Alain
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorLoo, Roger
dc.contributor.authorClemente, Francesca
dc.contributor.authorSatta, Alessandra
dc.contributor.authorMeuris, Marc
dc.date.accessioned2021-10-17T11:12:08Z
dc.date.available2021-10-17T11:12:08Z
dc.date.issued2008
dc.identifier.issn0040-6090
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14545
dc.sourceIIOimport
dc.titleBenefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge Layers on Si substrates
dc.typeJournal article
dc.contributor.imecauthorTerzieva, Valentina
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage172
dc.source.endpage177
dc.source.journalThin Solid Films
dc.source.issue1
dc.source.volume517
imec.availabilityPublished - open access


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