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Design methodology of FinFET devices that meet IC-level HBM ESD targets

dc.contributor.authorThijs, Steven
dc.contributor.authorRuss, Christian
dc.contributor.authorTremouilles, David
dc.contributor.authorLinten, Dimitri
dc.contributor.authorScholz, Mirko
dc.contributor.authorJurczak, Gosia
dc.contributor.authorCollaert, Nadine
dc.contributor.authorRooyackers, Rita
dc.contributor.authorSawada, M
dc.contributor.authorNakaei, T
dc.contributor.authorHasebe, T
dc.contributor.authorDuvvury, Charvaka
dc.contributor.authorGossner, Harald
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-17T11:13:24Z
dc.date.available2021-10-17T11:13:24Z
dc.date.issued2008-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14548
dc.sourceIIOimport
dc.titleDesign methodology of FinFET devices that meet IC-level HBM ESD targets
dc.typeProceedings paper
dc.contributor.imecauthorThijs, Steven
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecThijs, Steven::0000-0003-2889-8345
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewno
dc.source.beginpage295
dc.source.endpage303
dc.source.conference30th Electrical Overstress/Electrostatic Discharge Symposium - EOS/ESD
dc.source.conferencedate7/09/2008
dc.source.conferencelocationTucson, AZ USA
imec.availabilityPublished - imec


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